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SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

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制造商部分
SI2323DDS-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET P-CH 20V 5.3A SOT-23
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1897
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:5.3A (Tc)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:39mOhm @ 4.1A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:36 nC @ 8 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:1160 pF @ 10 V
场效应管特征:-
功耗(最大值):960mW (Ta), 1.7W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SOT-23
包/箱:TO-236-3, SC-59, SOT-23-3

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