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TSM061NA03CV RGG

TSM061NA03CV RGG

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制造商部分
TSM061NA03CV RGG
制造商
TSC (Taiwan Semiconductor)
描述
MOSFET N-CH 30V 66A 8PDFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9712
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:66A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:6.1mOhm @ 16A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:19.3 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:1136 pF @ 15 V
场效应管特征:-
功耗(最大值):44.6W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-PDFN (3x3)
包/箱:8-PowerWDFN

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