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BUK9E1R6-30E,127

BUK9E1R6-30E,127

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制造商部分
BUK9E1R6-30E,127
制造商
NXP Semiconductors
描述
MOSFET N-CH 30V 120A I2PAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9603
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:120A (Tc)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:1.4mOhm @ 25A, 10V
vgs(th) (最大值) @ id:2.1V @ 1mA
栅极电荷 (qg) (max) @ vgs:113 nC @ 5 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:16.15 pF @ 25 V
场效应管特征:-
功耗(最大值):349W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:I2PAK
包/箱:TO-262-3 Long Leads, I²Pak, TO-262AA

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