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STY100NM60N

STY100NM60N

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制造商部分
STY100NM60N
制造商
STMicroelectronics
描述
MOSFET N CH 600V 98A MAX247
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9501
在线数据表
-
询问

Product Specifications

Type 描述
系列:MDmesh™ II
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:98A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:29mOhm @ 49A, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:330 nC @ 10 V
vgs (最大值):25V
输入电容 (ciss) (max) @ vds:9600 pF @ 50 V
场效应管特征:-
功耗(最大值):625W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:MAX247™
包/箱:TO-247-3

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