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C3M0120065D

C3M0120065D

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制造商部分
C3M0120065D
制造商
Wolfspeed - a Cree company
描述
650V 120M SIC MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
431
在线数据表
-
询问

Product Specifications

Type 描述
系列:C3M™
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:22A (Tc)
驱动电压(最大 rds on,最小 rds on):15V
rds on (max) @ id, vgs:157mOhm @ 6.76A, 15V
vgs(th) (最大值) @ id:3.6V @ 1.86mA
栅极电荷 (qg) (max) @ vgs:28 nC @ 15 V
vgs (最大值):+19V, -8V
输入电容 (ciss) (max) @ vds:640 pF @ 400 V
场效应管特征:-
功耗(最大值):98W (Tc)
工作温度:-40°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247-3
包/箱:TO-247-3

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