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FQNL2N50BTA

FQNL2N50BTA

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制造商部分
FQNL2N50BTA
制造商
Sanyo Semiconductor/ON Semiconductor
描述
POWER FIELD-EFFECT TRANSISTOR, 0
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
20000
在线数据表
-
询问

Product Specifications

Type 描述
系列:QFET®
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):500 V
电流 - 连续漏极 (id) @ 25°c:350mA (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:5.3Ohm @ 175mA, 10V
vgs(th) (最大值) @ id:3.7V @ 250µA
栅极电荷 (qg) (max) @ vgs:8 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:230 pF @ 25 V
场效应管特征:-
功耗(最大值):1.5W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-92-3
包/箱:TO-226-3, TO-92-3 Long Body (Formed Leads)

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