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FDS86267P

FDS86267P

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制造商部分
FDS86267P
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET P-CH 150V 2.2A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1375
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):150 V
电流 - 连续漏极 (id) @ 25°c:2.2A (Ta)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:255mOhm @ 2.2A, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:16 nC @ 10 V
vgs (最大值):±25V
输入电容 (ciss) (max) @ vds:1130 pF @ 75 V
场效应管特征:-
功耗(最大值):1W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-SOIC
包/箱:8-SOIC (0.154", 3.90mm Width)

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