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IPD50N06S4L12ATMA1

IPD50N06S4L12ATMA1

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制造商部分
IPD50N06S4L12ATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 60V 50A TO252-31
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8501
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:50A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:12mOhm @ 50A, 10V
vgs(th) (最大值) @ id:2.2V @ 20µA
栅极电荷 (qg) (max) @ vgs:40 nC @ 10 V
vgs (最大值):±16V
输入电容 (ciss) (max) @ vds:2.89 pF @ 25 V
场效应管特征:-
功耗(最大值):50W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-TO252-3-11
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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