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| Type | 描述 |
|---|---|
| 系列: | U-MOSIX-H |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 94A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 47A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4420 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 830mW (Ta), 116W (Tc) |
| 工作温度: | 175°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOP Advance (5x5) |
| 包/箱: | 8-PowerVDFN |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
TPH11006NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 17A 8SOP |
有存货: 307 $0.76000 |
 |
IPN50R1K4CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 4.8A SOT223 |
有存货: 204 $0.49000 |
 |
IPP086N10N3IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 0 $0.66000 |
 |
TSM60N1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 3.3A TO252 |
有存货: 0 $0.43371 |
 |
IRFB3307ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220AB |
有存货: 175 $2.17000 |
 |
FDN5632N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 1.7A SUPERSOT3 |
有存货: 0 $0.60000 |
 |
STB36NM60NSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
有存货: 0 $6.18000 |
 |
STD30NF06T4STMicroelectronics |
MOSFET N-CH 60V 28A DPAK |
有存货: 1,437 $1.05000 |
 |
IPP80N03S4L03AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
有存货: 650 $2.06000 |
 |
IRFZ44VZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 57A TO220AB |
有存货: 459 $1.89000 |
