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IPP65R190E6XKSA1

IPP65R190E6XKSA1

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制造商部分
IPP65R190E6XKSA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 650V 20.2A TO220-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
116
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolMOS™
包裹:Tube
零件状态:Not For New Designs
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:20.2A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:190mOhm @ 7.3A, 10V
vgs(th) (最大值) @ id:3.5V @ 730µA
栅极电荷 (qg) (max) @ vgs:73 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:1620 pF @ 100 V
场效应管特征:-
功耗(最大值):151W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:PG-TO220-3
包/箱:TO-220-3

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