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TK39J60W,S1VQ

TK39J60W,S1VQ

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制造商部分
TK39J60W,S1VQ
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N-CH 600V 38.8A TO3P
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8011
在线数据表
-
询问

Product Specifications

Type 描述
系列:DTMOSIV
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:38.8A (Ta)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:65mOhm @ 19.4A, 10V
vgs(th) (最大值) @ id:3.7V @ 1.9mA
栅极电荷 (qg) (max) @ vgs:110 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:4100 pF @ 300 V
场效应管特征:Super Junction
功耗(最大值):270W (Tc)
工作温度:150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-3P(N)
包/箱:TO-3P-3, SC-65-3

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