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EPC2019

EPC2019

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制造商部分
EPC2019
制造商
EPC
描述
GANFET N-CH 200V 8.5A DIE
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
56824
在线数据表
-
询问

Product Specifications

Type 描述
系列:eGaN®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:GaNFET (Gallium Nitride)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:8.5A (Ta)
驱动电压(最大 rds on,最小 rds on):5V
rds on (max) @ id, vgs:50mOhm @ 7A, 5V
vgs(th) (最大值) @ id:2.5V @ 1.5mA
栅极电荷 (qg) (max) @ vgs:2.5 nC @ 5 V
vgs (最大值):+6V, -4V
输入电容 (ciss) (max) @ vds:270 pF @ 100 V
场效应管特征:-
功耗(最大值):-
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:Die
包/箱:Die

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