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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 93A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.7mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.45V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2160 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 79W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
EPC2215EPC |
GAN TRANS 200V 8MOHM BUMPED DIE |
有存货: 9,074 $6.12000 |
 |
FQPF6N80CT |
MOSFET N-CH 800V 5.5A TO220F |
有存货: 757 $2.17000 |
 |
IPA60R450E6XKSA1IR (Infineon Technologies) |
PFET, 600V, 0.45OHM, 1-ELEMENT, |
有存货: 7,500 $0.73000 |
 |
TK31V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
有存货: 0 $4.78500 |
 |
SIR836DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
有存货: 7,155 $0.87000 |
 |
SISS61DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 30.9/111.9A PPAK |
有存货: 0 $1.04000 |
 |
IPB60R299CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO263-3 |
有存货: 18,790 $1.16000 |
 |
SUM65N20-30-E3Vishay / Siliconix |
MOSFET N-CH 200V 65A TO263 |
有存货: 162 $4.44000 |
 |
IPT60R035CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 67A 8HSOF |
有存货: 1,961 $12.91000 |
 |
IXTH75N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO247 |
有存货: 420 $13.09000 |
