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CSD17555Q5A

CSD17555Q5A

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制造商部分
CSD17555Q5A
制造商
Texas Instruments
描述
OXIDE SEMICONDUCTOR FET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
208027
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:24A (Ta), 100A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:2.7mOhm @ 25A, 10V
vgs(th) (最大值) @ id:1.9V @ 250µA
栅极电荷 (qg) (max) @ vgs:28 nC @ 4.5 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:4.65 pF @ 15 V
场效应管特征:-
功耗(最大值):3W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-VSONP (5x6)
包/箱:8-PowerTDFN

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