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PHT11N06LT,135

PHT11N06LT,135

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制造商部分
PHT11N06LT,135
制造商
NXP Semiconductors
描述
MOSFET N-CH 55V 4.9A/10.7A SC73
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
15600
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):55 V
电流 - 连续漏极 (id) @ 25°c:4.9A (Ta), 10.7A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:40mOhm @ 5A, 5V
vgs(th) (最大值) @ id:2V @ 1mA
栅极电荷 (qg) (max) @ vgs:17 nC @ 5 V
vgs (最大值):±13V
输入电容 (ciss) (max) @ vds:1400 pF @ 25 V
场效应管特征:-
功耗(最大值):1.8W (Ta), 8.3W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SC-73
包/箱:TO-261-4, TO-261AA

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