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PMN20EN,115

PMN20EN,115

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制造商部分
PMN20EN,115
制造商
NXP Semiconductors
描述
SMALL SIGNAL FIELD-EFFECT TRANSI
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
20000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:6.7A (Tj)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:20mOhm @ 6.7A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:18.6 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:630 pF @ 15 V
场效应管特征:-
功耗(最大值):545mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-TSOP
包/箱:SC-74, SOT-457

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