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NTP8G206NG

NTP8G206NG

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制造商部分
NTP8G206NG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
GANFET N-CH 600V 17A TO220-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
22
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:GaNFET (Gallium Nitride)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:17A (Tc)
驱动电压(最大 rds on,最小 rds on):8V
rds on (max) @ id, vgs:180mOhm @ 11A, 8V
vgs(th) (最大值) @ id:2.6V @ 500µA
栅极电荷 (qg) (max) @ vgs:9.3 nC @ 4.5 V
vgs (最大值):±18V
输入电容 (ciss) (max) @ vds:760 pF @ 480 V
场效应管特征:-
功耗(最大值):96W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220-3
包/箱:TO-220-3

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