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SI2316DS-T1-GE3

SI2316DS-T1-GE3

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制造商部分
SI2316DS-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH 30V 2.9A SOT23-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5730
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:2.9A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:50mOhm @ 3.4A, 10V
vgs(th) (最大值) @ id:800mV @ 250µA (Min)
栅极电荷 (qg) (max) @ vgs:7 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:215 pF @ 15 V
场效应管特征:-
功耗(最大值):700mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SOT-23-3 (TO-236)
包/箱:TO-236-3, SC-59, SOT-23-3

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