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BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

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制造商部分
BSB104N08NP3GXUSA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 80V 13A/50A 2WDSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5718
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):80 V
电流 - 连续漏极 (id) @ 25°c:13A (Ta), 50A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:10.4mOhm @ 10A, 10V
vgs(th) (最大值) @ id:3.5V @ 40µA
栅极电荷 (qg) (max) @ vgs:31 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:2100 pF @ 40 V
场效应管特征:-
功耗(最大值):2.8W (Ta), 42W (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:MG-WDSON-2, CanPAK M™
包/箱:3-WDSON

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