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NTLJF3118NTBG

NTLJF3118NTBG

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制造商部分
NTLJF3118NTBG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 20V 2.6A 6WDFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
27000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:2.6A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:65mOhm @ 3.8A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:3.7 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:271 pF @ 10 V
场效应管特征:Schottky Diode (Isolated)
功耗(最大值):700mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-WDFN (2x2)
包/箱:6-WDFN Exposed Pad

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