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RJK60S5DPE-00#J3

RJK60S5DPE-00#J3

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制造商部分
RJK60S5DPE-00#J3
制造商
Renesas Electronics America
描述
MOSFET N-CH 600V 20A 4LDPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
40000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:20A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:178mOhm @ 10A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:27 nC @ 10 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:1.6 pF @ 25 V
场效应管特征:Super Junction
功耗(最大值):125W (Tc)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:4-LDPAK
包/箱:SC-83

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