| Type | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.3mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 111 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8161 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 306W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
SPB18P06PGATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 18.7A D2PAK |
有存货: 4 $1.28000 |
 |
IXTK600N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 600A TO264 |
有存货: 1,875 $17.90800 |
 |
TK6A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6A TO220SIS |
有存货: 1,797 $1.72000 |
 |
FDG329NFairchild (ON Semiconductor) |
MOSFET N-CH 20V 1.5A SC88 |
有存货: 389,160 $0.17000 |
 |
PMXB120EPEZNexperia |
MOSFET P-CH 30V 2.4A DFN1010D-3 |
有存货: 0 $0.33000 |
 |
DMP6110SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 8SOIC |
有存货: 1,011 $0.58000 |
 |
RM21N650T2Rectron USA |
MOSFET N-CH 650V 21A TO220-3 |
有存货: 0 $1.25000 |
 |
APT60M80L2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 65A 264 MAX |
有存货: 0 $33.59000 |
 |
SI7106DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12.5A PPAK1212-8 |
有存货: 2,973 $1.42000 |
 |
FCU600N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 6A IPAK |
有存货: 35,769,000 $1.23000 |
