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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1

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制造商部分
IGLD60R070D1AUMA1
制造商
IR (Infineon Technologies)
描述
GANFET N-CH 600V 15A LSON-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2275
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolGaN™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:GaNFET (Gallium Nitride)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:15A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:1.6V @ 2.6mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-10V
输入电容 (ciss) (max) @ vds:380 pF @ 400 V
场效应管特征:-
功耗(最大值):114W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-LSON-8-1
包/箱:8-LDFN Exposed Pad

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