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CSD19506KTT

CSD19506KTT

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制造商部分
CSD19506KTT
制造商
Texas Instruments
描述
MOSFET N-CH 80V 200A DDPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
129
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):80 V
电流 - 连续漏极 (id) @ 25°c:200A (Ta)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:2.3mOhm @ 100A, 10V
vgs(th) (最大值) @ id:3.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:156 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:12200 pF @ 40 V
场效应管特征:-
功耗(最大值):375W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:DDPAK/TO-263-3
包/箱:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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