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CSD16325Q5

CSD16325Q5

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制造商部分
CSD16325Q5
制造商
Texas Instruments
描述
MOSFET N-CH 25V 33A/100A 8VSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8501
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):25 V
电流 - 连续漏极 (id) @ 25°c:33A (Ta), 100A (Tc)
驱动电压(最大 rds on,最小 rds on):3V, 8V
rds on (max) @ id, vgs:2mOhm @ 30A, 8V
vgs(th) (最大值) @ id:1.4V @ 250µA
栅极电荷 (qg) (max) @ vgs:25 nC @ 4.5 V
vgs (最大值):+10V, -8V
输入电容 (ciss) (max) @ vds:4000 pF @ 12.5 V
场效应管特征:-
功耗(最大值):3.1W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-VSON-CLIP (5x6)
包/箱:8-PowerTDFN

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