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GA10SICP12-263

GA10SICP12-263

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制造商部分
GA10SICP12-263
制造商
GeneSiC Semiconductor
描述
TRANS SJT 1200V 25A D2PAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3468
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:-
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:25A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:100mOhm @ 10A
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:1403 pF @ 800 V
场效应管特征:-
功耗(最大值):170W (Tc)
工作温度:175°C (TJ)
安装类型:Surface Mount
供应商设备包:D2PAK (7-Lead)
包/箱:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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