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NVBG080N120SC1

NVBG080N120SC1

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制造商部分
NVBG080N120SC1
制造商
Sanyo Semiconductor/ON Semiconductor
描述
TRANS SJT N-CH 1200V 30A D2PAK-7
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
800
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:30A (Tc)
驱动电压(最大 rds on,最小 rds on):20V
rds on (max) @ id, vgs:110mOhm @ 20A, 20V
vgs(th) (最大值) @ id:4.3V @ 5mA
栅极电荷 (qg) (max) @ vgs:56 nC @ 20 V
vgs (最大值):+25V, -15V
输入电容 (ciss) (max) @ vds:1154 pF @ 800 V
场效应管特征:-
功耗(最大值):179W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:D2PAK-7
包/箱:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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