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IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

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制造商部分
IMZ120R045M1XKSA1
制造商
IR (Infineon Technologies)
描述
SICFET N-CH 1200V 52A TO247-4
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
112
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™
包裹:Tray
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:52A (Tc)
驱动电压(最大 rds on,最小 rds on):15V
rds on (max) @ id, vgs:59mOhm @ 20A, 15V
vgs(th) (最大值) @ id:5.7V @ 10mA
栅极电荷 (qg) (max) @ vgs:52 nC @ 15 V
vgs (最大值):+20V, -10V
输入电容 (ciss) (max) @ vds:1900 pF @ 800 V
场效应管特征:Current Sensing
功耗(最大值):228W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:PG-TO247-4-1
包/箱:TO-247-4

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