| Type | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 63A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 53.4 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 5.657 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 203W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
FDMC86259PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3.2A/13A PWR33 |
有存货: 255,424,000 $2.27000 |
 |
2SK3115-AZRenesas Electronics America |
N-CHANNEL POWER MOSFET |
有存货: 49,366 $3.33000 |
 |
IPB60R280P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A D2PAK |
有存货: 0 $1.23515 |
 |
SQM120P10_10M1LGE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO263 |
有存货: 642 $3.32000 |
 |
SI7434DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 2.3A PPAK SO-8 |
有存货: 635 $3.17000 |
 |
2SK3482-AZRenesas Electronics America |
MOSFET N-CH 100V 36A TO251 |
有存货: 0 $0.91182 |
 |
IRFI510GPBFVishay / Siliconix |
MOSFET N-CH 100V 4.5A TO220-3 |
有存货: 53 $2.18000 |
 |
MSC060SMA070SRoving Networks / Microchip Technology |
SICFET N-CH 700V 37A D3PAK |
有存货: 57 $9.01000 |
 |
SI7309DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8A PPAK1212-8 |
有存货: 5,171 $1.09000 |
 |
IPB80N04S306ATMA1IR (Infineon Technologies) |
OPTLMOS N-CHANNEL POWER MOSFET |
有存货: 0 $0.72000 |
