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SI8425DB-T1-E1

SI8425DB-T1-E1

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制造商部分
SI8425DB-T1-E1
制造商
Vishay / Siliconix
描述
MOSFET P-CH 20V 4WLCSP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2950
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:5.9A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:23mOhm @ 2A, 4.5V
vgs(th) (最大值) @ id:900mV @ 250µA
栅极电荷 (qg) (max) @ vgs:110 nC @ 10 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:2800 pF @ 10 V
场效应管特征:-
功耗(最大值):1.1W (Ta), 2.7W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:4-WLCSP (1.6x1.6)
包/箱:4-UFBGA, WLCSP

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