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SSM6J216FE,LF

SSM6J216FE,LF

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制造商部分
SSM6J216FE,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CHANNEL 12V 4.8A ES6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
6852
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVI
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):12 V
电流 - 连续漏极 (id) @ 25°c:4.8A (Ta)
驱动电压(最大 rds on,最小 rds on):1.5V, 4.5V
rds on (max) @ id, vgs:32mOhm @ 3.5A, 4.5V
vgs(th) (最大值) @ id:1V @ 1mA
栅极电荷 (qg) (max) @ vgs:12.7 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:1040 pF @ 12 V
场效应管特征:-
功耗(最大值):700mW (Ta)
工作温度:150°C
安装类型:Surface Mount
供应商设备包:ES6
包/箱:SOT-563, SOT-666

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