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HN1C03FU-B,LF

HN1C03FU-B,LF

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制造商部分
HN1C03FU-B,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
NPN + NPN IND. TRANSISTOR VCEO20
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 阵列
系列
-
有存货
2960
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:2 NPN (Dual)
电流 - 集电极 (ic) (max):300mA
电压 - 集电极发射极击穿(最大值):20V
vce 饱和度(最大值)@ ib, ic:100mV @ 3mA, 30A
电流 - 集电极截止(最大值):100nA (ICBO)
直流电流增益 (hfe) (min) @ ic, vce:350 @ 4mA, 2V
功率 - 最大值:200mW
频率转换:30MHz
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:US6

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