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HN1B04FE-GR,LF

HN1B04FE-GR,LF

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制造商部分
HN1B04FE-GR,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
TRANS NPN/PNP 50V 0.15A ES6
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 阵列
系列
-
有存货
1870
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:NPN, PNP
电流 - 集电极 (ic) (max):150mA
电压 - 集电极发射极击穿(最大值):50V
vce 饱和度(最大值)@ ib, ic:250mV @ 10mA, 100mA
电流 - 集电极截止(最大值):100nA (ICBO)
直流电流增益 (hfe) (min) @ ic, vce:200 @ 2mA, 6V
功率 - 最大值:100mW
频率转换:80MHz
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:ES6

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