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2SAR586D3TL1

2SAR586D3TL1

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制造商部分
2SAR586D3TL1
制造商
ROHM Semiconductor
描述
POWER TRANSISTOR WITH LOW VCE(SA
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单
系列
-
有存货
633
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:PNP
电流 - 集电极 (ic) (max):5 A
电压 - 集电极发射极击穿(最大值):80 V
vce 饱和度(最大值)@ ib, ic:320mV @ 100mA, 2A
电流 - 集电极截止(最大值):1µA (ICBO)
直流电流增益 (hfe) (min) @ ic, vce:120 @ 500mA, 3V
功率 - 最大值:10 W
频率转换:200MHz
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63
供应商设备包:TO-252

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