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NJVMJD112T4G

NJVMJD112T4G

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制造商部分
NJVMJD112T4G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
POWER BIPOLAR TRANSISTOR, 2A, NP
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单
系列
-
有存货
41900
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:NPN - Darlington
电流 - 集电极 (ic) (max):2 A
电压 - 集电极发射极击穿(最大值):100 V
vce 饱和度(最大值)@ ib, ic:3V @ 40mA, 4A
电流 - 集电极截止(最大值):20µA
直流电流增益 (hfe) (min) @ ic, vce:1000 @ 2A, 3V
功率 - 最大值:20 W
频率转换:25MHz
工作温度:-65°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63
供应商设备包:DPAK

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