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NJVMJD32T4G

NJVMJD32T4G

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制造商部分
NJVMJD32T4G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
POWER BIPOLAR TRANSISTOR, 3A, PN
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单
系列
-
有存货
2500
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:PNP
电流 - 集电极 (ic) (max):3 A
电压 - 集电极发射极击穿(最大值):40 V
vce 饱和度(最大值)@ ib, ic:1.2V @ 375mA, 3A
电流 - 集电极截止(最大值):50µA
直流电流增益 (hfe) (min) @ ic, vce:10 @ 3A, 4V
功率 - 最大值:1.56 W
频率转换:3MHz
工作温度:-65°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63
供应商设备包:DPAK

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